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| AUIRFP2907 hexfet ? power mosfet www.irf.com 1 s d g features ! "#$%& & ' ( ) (' & '& * + (,-)% & ' .' / 0 description specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ gds gate drain source v (br)dss 75v r ds(on) typ. 3.6m max 4.5m 0 i d (package limited) 90a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.32 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 5.0 1970 see fig. 12a, 12b, 15, 16 470 3.1 20 max. 209 148 840 90 -55 to + 175 300 10 lbf in (1.1n m) automotive grade to-247ac AUIRFP2907 s d g d 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 0.25mh r g = 25 , i as = 125a. (see figure 12). i sd 125a, di/dt 260a/ s, v dd v (br)dss , t j 175c. pulse width 400 s; duty cycle 2%. s d g c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . calculated continuous current based on maximum allowable junction temperature. package limitation current is 90a. limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. r is measured at t j of approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 75 ??? ??? v . 0.0 . . .0 .0 10 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 410 620 q gs gate-to-source charge ??? 92 140 nc q gd gate-to-drain ("miller") charge ??? 140 210 t d(on) turn-on delay time ??? 23 ??? t r rise time ??? 190 ??? t d(off) turn-off delay time ??? 130 ??? ns t f fall time ??? 130 ??? l d internal drain inductance ??? 5.0 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 13 ??? from package and center of die contact c iss input capacitance ??? 13000 ??? c oss output capacitance ??? 2100 ??? pf c rss reverse transfer capacitance ??? 500 ??? c oss output capacitance ??? 9780 ??? c oss output capacitance ??? 1360 ??? c oss eff. effective output capacitance ??? 2320 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 209 (body diode) a i sm pulsed source current ??? ??? 840 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 140 210 ns q rr reverse recovery charge ??? 880 1320 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 25c, i f = 125a di/dt = 100a/ s t j = 25c, i s = 125a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 125a mosfet symbol v dd = 38v i d = 125a r g = 1.2 conditions v gs = 10v v gs = 0v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 60v v gs = 0v, v ds = 60v, ? = 1.0mhz v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 125a i d = 125a v ds = 60v v gs = 20v v gs = -20v v gs = 10v v ds = 75v, v gs = 0v v ds = 60v, v gs = 0v, t j = 150c m v ds = 25v conditions v ds = v gs , i d = 250 a www.irf.com 3 1 .' / 2/' 3 / 4 2 5 &!!6 /6 ! 117+& 7%."8"9' 9' / & 6 111- & 6 qualification information ? to-247 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 425v) ??? aec-q101-002 human body model class h3a (+/- 8000v) ??? aec-q101-001 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 209a www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 100 200 300 400 500 600 700 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 125a v = 37v ds v = 60v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 4000 8000 12000 16000 20000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 40 80 120 160 200 240 t , case temperature ( c) i , drain current (a) c d limited by package v ds 90% 10% v gs t d(on) t r t d(off) t f 1 0.1 % + - fig 10a. switching time test circuit fig 10b. switching time waveforms 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc www.irf.com 7 25 50 75 100 125 150 175 0 1000 2000 3000 4000 5000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 51a 88a 125a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - "8 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 14. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , v a r i a c e ( v ) i d = 250 a 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 125a 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses 0.01 www.irf.com 9 for n-channel hexfet ? power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? 0 ! ? !"# ? $ % ? !"!&' () 0 % ( (% * :; 000 +, (!' ! - 10 www.irf.com % <=< >>=>?>? = ' , ( @' 2 3 % www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRFP2907 to-247 tube 25 AUIRFP2907 12 www.irf.com ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! ! ! ) ! & ! ! - ) ! . / - / & ) - ! 0 1 $ 1$ . 1$ ( ! / 1$ 2 ( / * ( ! .0'+. 34565 ( #$%! / 2 ( ! ( '&& ,& 34 % &5!!6 /6 ! /! . #/ 0 12#' 1 ( 345, 67-84,4 9, |
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